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| inchange semiconductor isc product specification isc silicon pnp power transistor BDY83 description continuous collector current-i c = -4a collector power dissipation- : p c = 36w @t c = 25 complement to type bdy81 applications designed for general purpose switching and amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -50 v v cex collector-emitter voltage v be = +1.5v -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -10 v i c collector current-continuous -4 a i b b base current-continuous -2 a p c collector power dissipation@t c =25 36 w t j junction temperature 150 t stg storage temperature -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BDY83 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = -100ma; i b = 0 -50 v v (br)cbo collector-base breakdown voltage i c = -10ma; i e = 0 -50 v v (br)ebo emitter-base breakdown voltage i e = -10ma; i c = 0 -10 v v ce (sat) collector-emitter saturation voltage i c = -3a; i b = -0.3a b -1.5 v v be( on ) base-emitter on voltage i c = -0.5a; v ce = -5v -0.9 v i ceo collector cutoff current v ce = -20v; i b = 0 b -10 ma i cbo collector cutoff current v cb = -20v; i e = 0 -0.2 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.1 ma h fe-1 dc current gain i c = -0.5a; v ce = -5v 40 240 h fe-2 dc current gain i c = -2.5a; v ce = -5v 10 f t current gain-bandwidth product i c = -0.5a; v ce = -10v 3 mhz ? h fe- 1 classifications a b c 40-80 70-140 120-240 isc website www.iscsemi.cn 2 |
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